Direct observation of conduction-band structure of <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mn>4</mn><mi>H</mi></math></span>- and <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mn>6</mn><mi>H</mi><mo>−</mo><mi mathvariant="normal">SiC</mi></math></span> using ballistic electron emission microscopy

B. Kaczer; H.-J. Im; J. P. Pelz; J. Chen; W. J. Choyke

doi:10.1103/PhysRevB.57.4027

Direct observation of conduction-band structure of $4 H$ - and $6 H - SiC$ using ballistic electron emission microscopy

B. Kaczer, H.-J. Im, J. P. Pelz, J. Chen, and W. J. Choyke

Phys. Rev. B 57, 4027 – Published 15 February 1998

Abstract

We performed ballistic electron emission microscopy (BEEM) measurements on Pt and $Pd / 4 H$ - and $6 H - SiC$ Schottky contacts, obtained Schottky barrier heights, and observed qualitatively different behavior of the BEEM spectra for $4 H$ - and $6 H - SiC .$ In particular, in $4 H - SiC$ we observed an additional minimum $\sim 0.14 eV$ above the lowest conduction-band minimum. We calculated the electronic band structure for both polytypes and found it in good quantitative agreement with our BEEM observations as well as good qualitative agreement with previous SiC band-structure calculations.