Analytical solutions of the block-diagonalized Hamiltonian for strained wurtzite semiconductors

M. Kumagai, S. L. Chuang, and H. Ando
Phys. Rev. B 57, 15303 – Published 15 June 1998
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Abstract

Analytical solutions using a recently derived block-diagonalized Hamiltonian for strained wurtzite crystals are shown. The theoretical results are used to extract the deformation potentials from the experimental results of the A-, B-, and C-line exciton transition energies as a function of the c-axis strain using a set of recently reported elastic stiffness constants. The obtained parameters are then applied to calculate the wave functions, valence band energies, effective masses, optical-momentum matrix elements, exciton Bohr radius, and binding energy as a function of strain. These analytical and numerical results are useful for understanding the optical and electronic properties near the band edges of strained wurtzite crystals.

  • Received 24 October 1997

DOI:https://doi.org/10.1103/PhysRevB.57.15303

©1998 American Physical Society

Authors & Affiliations

M. Kumagai

  • NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, 243-01, Japan

S. L. Chuang

  • Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 1406 West Green Street, Urbana, Illinois 61801

H. Ando

  • NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, 243-01, Japan

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Vol. 57, Iss. 24 — 15 June 1998

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