Interstitial oxygen in silicon under hydrostatic pressure

M. D. McCluskey and E. E. Haller
Phys. Rev. B 56, 9520 – Published 15 October 1997
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Abstract

Using infrared spectroscopy, we have measured the vibrational spectrum of interstitial oxygen in silicon under hydrostatic pressures as high as 70 kbar at temperatures from 4 to 20 K. The application of pressure transforms the transverse motion of the oxygen from that of a harmonic oscillator to that of a rotor. As the motion becomes more rotational, the splitting between the l=0 and l=±1 low-frequency modes decreases. In addition, the splitting between the stretch modes at 1136 and 1128cm1 decreases with increasing pressure and can no longer be resolved for pressures greater than 55 kbar.

  • Received 13 May 1997

DOI:https://doi.org/10.1103/PhysRevB.56.9520

©1997 American Physical Society

Authors & Affiliations

M. D. McCluskey and E. E. Haller

  • Lawrence Berkeley National Laboratory and University of California, Berkeley, California 94720

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Vol. 56, Iss. 15 — 15 October 1997

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