Abstract
Persistent spectral hole burning has been observed on the zero-phonon lines of the main site and several perturbed sites of in CaS:Eu single crystals. Hole burning occurs by two-step photoionization, can be strongly gated with IR irradiation, and takes place by excited-state absorption from the metastable excited state to the conduction band followed by electron transport to centers which are the dominant traps. A complex hole structure consisting of a narrow feature (200 MHz), and broader features ( and ) is observed. A mechanism is described for the occurrence of these unusually broad features. Time-varying internal electric fields which occur during the hole burning due to photoionization and trapping can lead to burning of holes at frequencies non-resonant with that of the laser. In addition, a mechanism for hole erasure, tunneling between Eu ions, is demonstrated. This mechanism is identified from the frequency dependence of the hole erasure which follows the absorption, and the linear dependence of the photoconductivity and hole erasure efficiency on irradiation power, both of which indicate erasure in a single-photon process.
- Received 9 June 1997
DOI:https://doi.org/10.1103/PhysRevB.56.12992
©1997 American Physical Society