Two-dimensional facet nucleation and growth on Si(111)

Da-Jiang Liu, John D. Weeks, M. D. Johnson, and Ellen D. Williams
Phys. Rev. B 55, 7653 – Published 15 March 1997
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Abstract

The lateral growth of an isolated nucleated facet is studied using a simple two-dimensional step model. An effective Hamiltonian that causes a planar surface to phase separate into facets and step bunches is proposed. The motions of the steps are determined by the relaxational dynamics of the effective Hamiltonian with and without a local conservation requirement. An even simpler mean-field-like model is used to illustrate the mechanism of the experimentally observed constant-velocity facet tip propagation. Numerical calculations using thermodynamic and transport coefficients previously measured give good agreement with experiments under the local conservation requirement.

  • Received 30 August 1996

DOI:https://doi.org/10.1103/PhysRevB.55.7653

©1997 American Physical Society

Authors & Affiliations

Da-Jiang Liu

  • Department of Physics, University of Maryland, College Park, Maryland 20742

John D. Weeks

  • Institute for Physical Science and Technology and Department of Chemistry, University of Maryland, College Park, Maryland 20742

M. D. Johnson

  • Department of Physics, University of Maryland, College Park, Maryland 20742

Ellen D. Williams

  • Department of Physics and Institute for Physical Science and Technology, University of Maryland, College Park, Maryland 20742

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Vol. 55, Iss. 12 — 15 March 1997

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