The trapping and thermal emission of holes were studied from a deep acceptor level created during thermal annealing of a ${\mathrm{Cd}}_{1\mathrm{-}\mathrm{x}}$${\mathrm{Zn}}_{\mathrm{x}}$Te (x=0.12) crystal grown by the high-pressure Bridgman (HPB) technique using thermoelectric-effect spectroscopy and thermally stimulated current experiments. The deep level, which is usually absent in as-grown HPB ${\mathrm{Cd}}_{1\mathrm{-}\mathrm{x}}$${\mathrm{Zn}}_{\mathrm{x}}$Te crystals, is assigned to the 2-/- acceptor level of Cd (Zn) vacancies. The thermal ionization energy of the level is ${\mathrm{E}}_{\mathrm{th}}$ =(0.43±0.01) eV, and the trapping cross section of holes was found to be σ=(2.0±0.2)×${10}^{\mathrm{-}16}$ ${\mathrm{cm}}^{\mathrm{-}2}$.

DOI:https://doi.org/10.1103/PhysRevB.55.6945