Breakdown of the quantum Hall effect in periodic and aperiodic antidot arrays

G. Nachtwei, G. Lütjering, D. Weiss, Z. H. Liu, K. von Klitzing, and C. T. Foxon
Phys. Rev. B 55, 6731 – Published 15 March 1997
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Abstract

We have studied the breakdown of the quantum Hall effect in GaAs/AlxGa1xAs heterostructures with antidot arrays as a function of the density and distribution of antidots. For periodic arrays (lithographic antidot diameter 100 nm) and periods from 400 to 1000 nm, the breakdown current is systematically reduced with increasing antidot density and determined by the peak value of the local current density. In aperiodic arrays, the breakdown current is markedly lower than in periodic arrays of the same antidot density due to higher local current densities at the same total current.

    DOI:https://doi.org/10.1103/PhysRevB.55.6731

    ©1997 American Physical Society

    Authors & Affiliations

    G. Nachtwei, G. Lütjering, D. Weiss, Z. H. Liu, K. von Klitzing, and C. T. Foxon

    • Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany

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    Vol. 55, Iss. 11 — 15 March 1997

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