Pressure-induced shallow donor transformations in gallium arsenide

Leonardo Hsu; S. Zehender; E. Bauser; E. E. Haller

doi:10.1103/PhysRevB.55.10515

Pressure-induced shallow donor transformations in gallium arsenide

Leonardo Hsu, S. Zehender, E. Bauser, and E. E. Haller

Phys. Rev. B 55, 10515 – Published 15 April 1997

Abstract

Using hydrostatic pressure, we have transformed GaAs into an indirect band-gap semiconductor with a conduction-band minimum near the X point of the Brillouin zone. Ground to bound excited-state transitions of X-point group-IV donors in GaAs are investigated using broadband far-infrared Fourier-transform absorption spectroscopy.

Received 16 October 1996

DOI:https://doi.org/10.1103/PhysRevB.55.10515

Authors & Affiliations

Leonardo Hsu

Department of Physics, University of California, Berkeley, California 94720
and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

S. Zehender and E. Bauser

Max-Planck-Institute for Solid State Research, D-70506 Stuttgart, Germany

E. E. Haller

Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
and Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720

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Vol. 55, Iss. 16 — 15 April 1997

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