Transport properties of an engineered [001] tilt series in bulk YBa2Cu3O7x bicrystals

M. St. Louis-Weber, V. P. Dravid, V. R. Todt, X. F. Zhang, D. J. Miller, and U. Balachandran
Phys. Rev. B 54, 16238 – Published 1 December 1996
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Abstract

Single grain boundaries (GB’s) of an engineered [001] tilt series of bulk YBa2Cu3O7x (YBCO) bicrystals were electrically characterized to probe the intrinsic and extrinsic factors influencing GB properties of bulk melt-processed (MP) YBCO. The bicrystal series ranged from 1.5° to 45° misorientation angle and displayed tendencies similar to those of thin film GB’s at 77 K in self-field. Subtle differences between thin film and bulk GB transport behavior that were observed may be attributed to the thin film substrate. The dependence of normal-state resistance (Rn) at 77 K on the [001] tilt angle has been noted. An anticorrelation between Rn and critical current (Ic) exists such that the product, IcRn, of each bicrystal from 10° to 45° falls within a narrow band of 10 to 20 μV. Such a narrow characteristic voltage range suggests highly reproducible growth conditions. It is also reasonable to suggest that naturally grown boundaries in bulk MP YBCO have more uniform GB character than their thin film counterparts. This advantageous growth technique allows us to further probe the role of the GB plane in influencing transport properties. © 1996 The American Physical Society.

  • Received 5 August 1996

DOI:https://doi.org/10.1103/PhysRevB.54.16238

©1996 American Physical Society

Authors & Affiliations

M. St. Louis-Weber and V. P. Dravid

  • Materials Science and Engineering, Science and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208

V. R. Todt, X. F. Zhang, and D. J. Miller

  • Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439

U. Balachandran

  • Energy Technology Division, Argonne National Laboratory, Argonne, Illinois 60439

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Vol. 54, Iss. 22 — 1 December 1996

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