Critical temperature for mound formation in molecular-beam epitaxy

Jacques G. Amar and Fereydoon Family
Phys. Rev. B 54, 14071 – Published 15 November 1996
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Abstract

The results of an analytic calculation of the surface current and selected mound angle as a function of the Ehrlich-Schwoebel step barrier EB and substrate temperature T are presented for a model of epitaxial growth on bcc(100) and fcc(100) surfaces. Depending on the sign of EB and the magnitude of the prefactor for diffusion over a step, various scenarios are possible, including the existence of a critical temperature Tc for mound formation above which (for a positive step barrier) or below which (for a negative step barrier) quasi-layer-by-layer growth will be observed. For the case of Fe/Fe(100) deposition our calculation implies an upper bound for Tc which is consistent with experiment. The weak parameter dependence of our estimates for the mound angle confirms and explains the good agreement found in previous estimates assuming different values of the step barrier. We also clarify the transition to layer-by-layer growth at low and high temperature including the effect of a finite diffusion length on reentrant behavior at low temperature. © 1996 The American Physical Society.

  • Received 22 May 1996

DOI:https://doi.org/10.1103/PhysRevB.54.14071

©1996 American Physical Society

Authors & Affiliations

Jacques G. Amar and Fereydoon Family

  • Department of Physics, Emory University, Atlanta, Georgia 30322

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Issue

Vol. 54, Iss. 19 — 15 November 1996

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