Abstract
Excitons confined to flat semiconductor quantum dots with elliptical cross sections are considered as we study geometrical effects on exciton binding energy, electron-hole separation, and the resulting linear optical properties. We use numerical matrix diagonalization techniques with appropriately large and optimized basis sets in an effective-mass Hamiltonian approach. The linear optical susceptibilities of GaAs and InAs dots for several different size ratios are discussed and compared to experimental photoluminescence spectra obtained on GaAs/As and InAs/GaAs quantum dots. For quantum dots of several nm in size, there is a strong blueshift of the luminescence due to geometrical-confinement effects. Also, transition peaks are split and shifted towards higher energy, in comparison with dots with circular cross sections.
- Received 20 April 1995
DOI:https://doi.org/10.1103/PhysRevB.52.9015
©1995 American Physical Society