Temperature dependence of electronic states in (TaSe4)2I

A. Terrasi, M. Marsi, H. Berger, G. Margaritondo, R. J. Kelley, and M. Onellion
Phys. Rev. B 52, 5592 – Published 15 August 1995
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Abstract

Angle-resolved photoemissions studies were conducted on single-crystal (TaSe4)2I samples above and below the charge-density-wave transition temperature (TCDW) of 260 K. We observed a shift of the leading photoemission edge between 300 and 60 K consistent with resistivity measurements performed on the same sample: a band gap opens throughout the Brillouin zone below TCDW. However, several aspects of the data are difficult to reconcile with any standard model.

  • Received 8 February 1995

DOI:https://doi.org/10.1103/PhysRevB.52.5592

©1995 American Physical Society

Authors & Affiliations

A. Terrasi, M. Marsi, H. Berger, and G. Margaritondo

  • Institut de Physique Appliquée and Institut de Génie Atomique, Ecole Polytechnique Fédérale, CH-1015 Lausanne, Switzerland

R. J. Kelley and M. Onellion

  • Physics Department, University of Wisconsin, Madison, Wisconsin 53706

Comments & Replies

Reply to “Comment on ‘Temperature dependence of electronic states in (TaSe4)2I’ ”

A. Terrasi, M. Marsi, H. Berger, G. Margaritondo, R. J. Kelley, and M. Onellion
Phys. Rev. B 56, 12647 (1997)

Comment on “Temperature dependence of electronic states in (TaSe4)2I”

R. Claessen, C. Wilde, F. Reinert, S. Hüfner, G.-H. Gweon, J. W. Allen, D. M. Poirier, and C. G. Olson
Phys. Rev. B 56, 12643 (1997)

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Vol. 52, Iss. 8 — 15 August 1995

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