We have investigated local variations in the optical properties of ${\mathrm{In}}_{0.06}$${\mathrm{Ga}}_{0.94}$As/GaAs using linearly polarized cathodoluminescence imaging and spectroscopy. The influence of substrate misorientation on the polarization anisotropy of excitonic luminescence in the ${\mathrm{In}}_{0.06}$${\mathrm{Ga}}_{0.94}$As films was examined. Local variations in excitonic polarization anisotropy and emission energy are found to correlate spatially with dark line defects which result from the formation of interfacial misfit dislocations.

• Received 14 November 1994

DOI:https://doi.org/10.1103/PhysRevB.51.5033