Optical properties and electronic structures of α- and γ-Ce

Joo Yull Rhee, Xindong Wang, B. N. Harmon, and D. W. Lynch
Phys. Rev. B 51, 17390 – Published 15 June 1995
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Abstract

The optical properties of metallis α- and γ-Ce were investigated by spectroscopic ellipsometry in the energy range 1.5–5.4 eV. The samples were thin films deposited in situ at room temperature and at 25 K for γ- and α-Ce, respectively. The measured conductivities decrease in magnitude as the thickness increases, which can be explained with a microscopic surface roughness model. The optical conductivity increases upon entering the α phase because of the increased number of electrons per unit volume due to the volume collapse. The energy band structures and the optical conductivities were calculated using the linearized-augmented-plane-wave (LAPW) method within density-functional theory, treating both the 4f and 5p electrons as bandlike. The application of the partial sum rule to angular-momentum-decomposed optical conductivities shows that the 4f electron contributions in the measured energy range is small.

  • Received 10 February 1994

DOI:https://doi.org/10.1103/PhysRevB.51.17390

©1995 American Physical Society

Authors & Affiliations

Joo Yull Rhee

  • Department of Physics, College of Natural Sciences, Hoseo University, Asan, 336-795 Choongnam, Korea

Xindong Wang, B. N. Harmon, and D. W. Lynch

  • Ames Laboratory–U.S. Department of Energy and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011

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Vol. 51, Iss. 24 — 15 June 1995

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