Thermal conductivity of a-Si:H thin films

David G. Cahill, M. Katiyar, and J. R. Abelson
Phys. Rev. B 50, 6077 – Published 1 September 1994
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Abstract

The thermal conductivity of sputtered a-Si:H thin films for a hydrogen content of 1–20 % and a film thickness of 0.2–1.5 μm is determined in the temperature range 80–400 K using an extension of the 3ω measurement technique. The reliability of the method is demonstrated on 1-μm-thick a-SiO2 thermally grown on Si. Scattering of phonons at the interface between the a-Si:H film and the substrate places a simple upper limit on the heat transport by long-wavelength phonons and facilitates the comparison of the experimental data to recent numerical solutions of a Kubo formula using harmonic vibrations.

  • Received 18 February 1994

DOI:https://doi.org/10.1103/PhysRevB.50.6077

©1994 American Physical Society

Authors & Affiliations

David G. Cahill, M. Katiyar, and J. R. Abelson

  • Department of Materials Science and Engineering, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801

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Vol. 50, Iss. 9 — 1 September 1994

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