Third-order optical nonlinearities in semiconductors: The two-band model

Claudio Aversa, J. E. Sipe, M. Sheik-Bahae, and E. W. Van Stryland
Phys. Rev. B 50, 18073 – Published 15 December 1994
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Abstract

We calculate the coherent electronic contributions to the third-order optical response χ(3)(-ω;ω,Ω,-Ω) of bulk semiconductors in the independent-particle approximation using a simple two-band model. The formalism used to derive this response coefficient naturally accounts for all relevant contributions and, in contrast to existing results in the literature, leads to physically realistic, nondivergent expressions in the limits ω,Ω→0. Such well behaved infrared limits imply that the imaginary part of our χ(3) correctly describes the dispersion of nondegenerate absorption; indeed for Ω=0 our results are consistent with predictions from Franz-Keldysh theory. Complementing these results, we can now also unambiguously extract from the real part of χ(3) the below band gap, two-band model predictions for the nonlinear refractive index, the dc Kerr effect, and the virtual photoconductivity; all of these predict a finite, real χ(3)(0;0,0,0) as physically expected for clean, cold semiconductors. Finally, our specific results help expose more general consequences of the gauge choice when employing common approximate band-structure models.

  • Received 8 September 1994

DOI:https://doi.org/10.1103/PhysRevB.50.18073

©1994 American Physical Society

Authors & Affiliations

Claudio Aversa and J. E. Sipe

  • Department of Physics and Ontario Laser and Lightwave Research Centre, University of Toronto, Toronto, Ontario, Canada M5S 1A7

M. Sheik-Bahae

  • Department of Physics and Astronomy, University of New Mexico, Albuquerque, New Mexico 87131

E. W. Van Stryland

  • Center for Research and Education in Optics and Lasers and Department of Physics and Electrical Engineering, University of Central Florida, Orlando, Florida 32826

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Issue

Vol. 50, Iss. 24 — 15 December 1994

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