Theoretical investigations of resonant tunneling in asymmetric multibarrier semiconductor heterostructures in an applied constant electric field

Shaune S. Allen and Steven L. Richardson
Phys. Rev. B 50, 11693 – Published 15 October 1994
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Abstract

We solve the one-dimensional Schrödinger wave equation in the effective-mass approximation for the transmission coefficient T(E) of electrons through asymmetric multibarrier semiconductor heterostructures in the presence of a constant applied electric field, using an exact Airy-function formalism and the transfer-matrix technique. In particular, we show that for appropriate choices of asymmetry in the barrier widths and heights of the semiconductor heterostructure, the transmission coefficient is enhanced to yield resonances that are stronger than those calculated in symmetric structures, thus giving further validity to Mendez’s concept of effective-barrier symmetry for obtaining optimal resonant tunneling in asymmetric double- and triple-barrier semiconductor heterostructures. These results should assist experimental efforts in designing resonant-tunneling systems that require optimum peaks both in the transmission spectrum and current density.

  • Received 30 June 1994

DOI:https://doi.org/10.1103/PhysRevB.50.11693

©1994 American Physical Society

Authors & Affiliations

Shaune S. Allen and Steven L. Richardson

  • Department of Electrical Engineering and Materials Science Research Center, Howard University, School of Engineering, 2300 Sixth Street, N.W., Washington, D.C. 20059

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Issue

Vol. 50, Iss. 16 — 15 October 1994

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