Excitation and polarization effects in semiconductor four-wave-mixing spectroscopy

Y. Z. Hu, R. Binder, S. W. Koch, S. T. Cundiff, H. Wang, and D. G. Steel
Phys. Rev. B 49, 14382 – Published 15 May 1994
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Abstract

The dependence of optical four-wave-mixing (FWM) signals in semiconductors on carrier density and laser-field polarization is investigated. The theoretical and experimental analysis reveals the importance of the excitation-induced dephasing processes for the understanding of numerous published results on polarization selections rules in FWM signals. Even apparently contradictory earlier findings can be explained with this theoretical model.

  • Received 28 February 1994

DOI:https://doi.org/10.1103/PhysRevB.49.14382

©1994 American Physical Society

Authors & Affiliations

Y. Z. Hu, R. Binder, and S. W. Koch

  • Optical Sciences Center, University of Arizona, Tucson, Arizona 85721

S. T. Cundiff, H. Wang, and D. G. Steel

  • H. M. Randall Laboratory of Physics, University of Michigan, Ann Arbor, Michigan 48109

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Vol. 49, Iss. 20 — 15 May 1994

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