Raman-scattering study of the electron-phonon interaction in M3C60 (M=K,Rb)

Ping Zhou, Kai-An Wang, P. C. Eklund, G. Dresselhaus, and M. S. Dresselhaus
Phys. Rev. B 48, 8412 – Published 15 September 1993
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Abstract

Temperature (T) -dependent Raman scattering from C603 intramolecular modes and simultaneous electrical resistivity measurements were made on Rb3C60 films which exhibited a superconducting transition temperature Tc=28 K. K3C60 films were studied for comparison, but at T=300 K only. Weak, or no T dependence in the intramolecular modes is observed through Tc, consistent with the fact that the mode frequencies ω>2Δ (superconducting gap). By comparing the linewidths of the modes in M3C60 to values in pristine C60 we have estimated their contributions to the electron-phonon coupling constant λ. Values of λ have been found to be 0.6 and 0.5 for K3C60 and Rb3C60, respectively, in good agreement with the theoretical value λ=0.6 obtained previously by Schlüter and co-workers. The Hg(2)-derived mode is found to make the dominant contribution to λ. A line-shape analysis of the Hg(1)-derived mode suggests that this mode is a Breit-Wigner-Fano resonance. The radial Ag(1)-derived mode linewidth in Rb3C60 is anomalously narrow (∼0.1 cm1), and found to be very sensitive to sample quality, i.e., strongly correlated with the width of the superconducting transition.

  • Received 2 April 1993

DOI:https://doi.org/10.1103/PhysRevB.48.8412

©1993 American Physical Society

Authors & Affiliations

Ping Zhou, Kai-An Wang, and P. C. Eklund

  • Center for Applied Energy Research and Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40511

G. Dresselhaus

  • Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

M. S. Dresselhaus

  • Department of Electrical Engineering and Computer Science and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

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Vol. 48, Iss. 11 — 15 September 1993

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