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Raman scattering and collective excitations in doped tunneling semiconductor superlattices

Xiaoju Wu and Sergio E. Ulloa
Phys. Rev. B 47, 6799(R) – Published 15 March 1993
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Abstract

We present a theoretical study of the electronic excitations in doped tunneling semiconductor superlattices of finite size. Raman scattering yields are obtained from the density-density response function, providing mode dispersion relations and relative intensities. We find that as the intraminiband and interminiband plasma modes carry most of the oscillator strength, other single-particle-like excitations have nonvanishing intensities as well. Strong surface-related modes, associated with charge depletion near the surface layers, are shown for finite wavelengths. The intraminiband plasma mode exhibits a two-dimensional-like behavior for long wavelengths, and carries most of the oscillator strength for short ones, while one of the surface modes shows a nearly linear dispersion relation. A novel tunneling mode has nonzero frequency and strength as the wave vector approaches zero.

  • Received 21 September 1992

DOI:https://doi.org/10.1103/PhysRevB.47.6799

©1993 American Physical Society

Authors & Affiliations

Xiaoju Wu and Sergio E. Ulloa

  • Department of Physics and Astronomy and Condensed Matter and Surface Sciences Program, Ohio University, Athens, Ohio 45701-2979

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Vol. 47, Iss. 11 — 15 March 1993

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