Transport properties of optically generated free carriers in hydrogenated amorphous silicon in the femtosecond time regime

A. Esser, H. Heesel, H. Kurz, C. Wang, G. N. Parsons, and G. Lucovsky
Phys. Rev. B 47, 3593 – Published 15 February 1993
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Abstract

We present spectral- and time-resolved reflectivity and transmission measurements on hydrogenated amorphous silicon, a-Si:H, with 50 fs time resolution. Electron-hole pairs are photoexcited into the extended states of a-Si:H by an ultrashort pump pulse at a photon energy of 2 eV. The optical response of photogenerated carriers is studied on an ultrashort time scale, Δt∼100 fs, after the excitation process where recombination and trapping can be neglected. The spectral dependence of the optical response is analyzed in terms of a hopping model for the transport of the photogenerated carriers in the extended states of a-Si:H.

  • Received 1 June 1992

DOI:https://doi.org/10.1103/PhysRevB.47.3593

©1993 American Physical Society

Authors & Affiliations

A. Esser, H. Heesel, and H. Kurz

  • Institute for Semiconductor Electronics II, Rheinisch-Westfälische Technische Hochschule Aachen, Sommerfeldstrasse 24, W-5100 Aachen, Germany

C. Wang, G. N. Parsons, and G. Lucovsky

  • Departments of Physics, and Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202

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Vol. 47, Iss. 7 — 15 February 1993

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