Fractional quantum Hall effect at ν=2/3 and 3/5 in tilted magnetic fields

L. W. Engel, S. W. Hwang, T. Sajoto, D. C. Tsui, and M. Shayegan
Phys. Rev. B 45, 3418 – Published 15 February 1992
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Abstract

We report on measurements of electron transport for the fractional quantum Hall effect (FQHE) at filling factors ν=2/3 and 3/5, in magnetic fields Bt tilted by angles θ with respect to the normal to the sample plane. Our device was prepared at an electron density of only 2.4×1010 cm2, but still exhibited a well-developed FQHE at ν=2/3 and 3/5. This exceptionally low density allowed us to access very low total fields, where the spin is less likely to be completely polarized. For many tilt angles, we obtained gap energies Δ from the temperature dependence of the diagonal conductivity on the FQHE minima. For both 2/3 and 3/5, plots of Δ versus Bt exhibit minima that are accompanied in transport by splitting of the FQHE. For 2/3 the minimum in Δ(Bt) is sharp and deep, with Δ reduced by 70%. With Bt well above its value at the minimum, Δ(Bt) for ν=2/3 is linear, with slope ≊gμB for GaAs, indicating an increase in the two-dimensional electron-system Zeeman energy on excitation. We present a detailed survey of the evolution of the splitting of the FQHE with angle, and find that local ρxx minima that are shifted up to 6% upfield of ν=2/3 at θ≊23° evolve continuously into an unsplit FQHE at ν=2/3 at θ≊0°. The split and shifted FQHE’s that we observe are interpreted as effects of phase separation associated with ground-state spin transitions.

  • Received 26 July 1991

DOI:https://doi.org/10.1103/PhysRevB.45.3418

©1992 American Physical Society

Authors & Affiliations

L. W. Engel, S. W. Hwang, T. Sajoto, D. C. Tsui, and M. Shayegan

  • Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544

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Vol. 45, Iss. 7 — 15 February 1992

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