Bonding of Cs on Si and Ge surfaces studied by core-level spectroscopy

D.-S. Lin, T. Miller, and T.-C. Chiang
Phys. Rev. B 44, 10719 – Published 15 November 1991
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Abstract

The core-level line shapes of Si(111)-(7×7), Si(100)-(2×1), and Ge(100)-(2×1) are examined with synchrotron-radiation photoemission both before and after Cs adsorption. The Cs-induced core-level shifts are determined. The results indicate that the chemisorption bond is partially ionic, and the Si or Ge surface atoms each have an extra charge of about 0.3 electron after Cs adsorption.

  • Received 29 April 1991

DOI:https://doi.org/10.1103/PhysRevB.44.10719

©1991 American Physical Society

Authors & Affiliations

D.-S. Lin, T. Miller, and T.-C. Chiang

  • Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801
  • Material Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801

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Issue

Vol. 44, Iss. 19 — 15 November 1991

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