Energy-level structure of two-dimensional electrons confined at the <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Al</mi></mrow><mrow><mi mathvariant="italic">x</mi></mrow></msub></mrow></math></span><span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Ga</mi></mrow><mrow><mn>1</mn><mi mathvariant="normal">−</mi><mi mathvariant="italic">x</mi></mrow></msub></mrow></math></span>As/GaAs interface studied by photoluminescence excitation spectroscopy

Q. X. Zhao; Y. Fu; P. O. Holtz; B. Monemar; J. P. Bergman; K. A. Chao; M. Sundaram; J. L. Merz; A. C. Gossard

doi:10.1103/PhysRevB.43.5035

Energy-level structure of two-dimensional electrons confined at the ${Al}_{x}$ ${Ga}_{1 - x}$ As/GaAs interface studied by photoluminescence excitation spectroscopy

Q. X. Zhao, Y. Fu, P. O. Holtz, B. Monemar, J. P. Bergman, K. A. Chao, M. Sundaram, J. L. Merz, and A. C. Gossard

Phys. Rev. B 43, 5035 – Published 15 February 1991

Abstract

The electronic structure of one-sided modulation-doped n-channel ${Al}_{x}$ ${Ga}_{1 - x}$ As/GaAs heterostructures has been studied by photoluminescence excitation spectroscopy in samples with a narrow (≊500 Å) active GaAs region. The excited two-dimensional (2D) electron states are observed optically at 2 K, and 2D hole quantization is also found to be important for the structure investigated. Theoretical calculations including exciton effects show good agreement with the experimental data.

Received 20 September 1990

DOI:https://doi.org/10.1103/PhysRevB.43.5035

Authors & Affiliations

Q. X. Zhao, Y. Fu, P. O. Holtz, B. Monemar, and J. P. Bergman

Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden

K. A. Chao

Deparment of Physics, University of Trondheim, Norwegian Institute of Technology, N-7034 Trondheim, Norway

M. Sundaram, J. L. Merz, and A. C. Gossard

Center for Quantized Electronic Structures, University of California, Santa Barbara, California 93106

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Vol. 43, Iss. 6 — 15 February 1991

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