Abstract
The energetics of shallow impurity compensation in GaAs via reactions of the type →(+), where V denotes a vacancy and a Ga-antisite defect is examined. It is proposed that in n-type GaAs this single-atom-displacement reaction is unstable with respect to a similar type of process, namely, 2→(++GaAs). The latter does not lead to any compensation of donors, thereby removing discrepancies between theoretical predictions and experimental results on donor passivation by native defects in GaAs.
- Received 28 August 1989
DOI:https://doi.org/10.1103/PhysRevB.41.5444
©1990 American Physical Society