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Quantum tunneling and low-voltage resistance in small superconducting tunnel junctions

M. Iansiti, A. T. Johnson, C. J. Lobb, and M. Tinkham
Phys. Rev. B 40, 11370(R) – Published 1 December 1989
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Abstract

We discuss simple models which appear to account quantitatively for the anomalous low-voltage resistance R0 observed in small, high-resistance Josephson tunnel junctions. We compare our predictions with both new and previously reported measurements. At high temperatures R0 is fit well by a model based on thermal activation. At low temperatures, our results are in good agreement with a model based on theoretical predictions for macroscopic quantum tunneling rates in the underdamped limit. The crossover temperature between the two regimes is dependent on magnetic field, as expected.

  • Received 4 August 1989

DOI:https://doi.org/10.1103/PhysRevB.40.11370

©1989 American Physical Society

Authors & Affiliations

M. Iansiti, A. T. Johnson, C. J. Lobb, and M. Tinkham

  • Physics Department and Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138

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Issue

Vol. 40, Iss. 16 — 1 December 1989

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