Band-narrowing effects in URh3Bx

B. D. Dunlap, G. W. Crabtree, J. D. Jorgensen, H. A. Kierstead, D. D. Koelling, W. K. Kwok, D. J. Lam, S. K. Malik, A. W. Mitchell, and S. C. Strite
Phys. Rev. B 39, 5640 – Published 15 March 1989
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Abstract

Data are presented showing that the addition of B to URh3, which is well known to be a compound having itinerant f electrons, results in a localization of those f electrons and a narrowing of the 5f band. Band-structure calculations carried out for URh3 and URh3B show that the band narrowing occurs due to a dehybridization between U f electrons and Rh d electrons as boron is added to the system. The nature of the band narrowing relative to this dehybridization is clarified. Comparison of heat-capacity data with the band-structure results shows that the band narrowing causes an increase both in the f-electron density of states at the Fermi energy and in the f-electron mass enhancement. However, the latter is still smaller than that seen in classic mixed-valence systems, such as CeSn3, or in heavy-fermion systems, such as UPt3.

  • Received 12 December 1988

DOI:https://doi.org/10.1103/PhysRevB.39.5640

©1989 American Physical Society

Authors & Affiliations

B. D. Dunlap, G. W. Crabtree, J. D. Jorgensen, H. A. Kierstead, D. D. Koelling, W. K. Kwok, D. J. Lam, S. K. Malik, A. W. Mitchell, and S. C. Strite

  • Materials Science Division, Argonne National Laboratory, Bldg. 223, Argonne, Illinois 60439-4843

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Vol. 39, Iss. 9 — 15 March 1989

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