Photopyroelectric spectroscopy of a-Si:H thin semiconducting films on quartz

A. Mandelis, R. E. Wagner, K. Ghandi, R. Baltman, and Phat Dao
Phys. Rev. B 39, 5254 – Published 15 March 1989
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Abstract

Photopyroelectric spectroscopy (PPES) of plasma-enhanced chemical-vapor-deposited a-Si:H thin films on quartz has been performed and compared with the conventional widely used photothermal deflection spectroscopy (PDS). High-modulation-frequency (thermally thick limit) data were combined to yield self-consistent optical-absorption-coefficient and nonradiative quantum efficiency spectra. The quality of the PPES optical-absorption-coefficient spectrum was found to be similar to the PDS spectrum. The former technique, however, has the advantage of not requiring a coupling fluid interface to the delicate, electronically active thin film.

  • Received 19 August 1988

DOI:https://doi.org/10.1103/PhysRevB.39.5254

©1989 American Physical Society

Authors & Affiliations

A. Mandelis, R. E. Wagner, K. Ghandi, and R. Baltman

  • Photoacoustic and Photothermal Sciences Laboratory, Department of Mechanical Engineering
  • Ontario Laser and Lightwave Research Center, University of Toronto, Toronto, Ontario, Canada M5S1A4

Phat Dao

  • Corporate Analytical Laboratory, Eastman Kodak Research Laboratories, Rochester, New York 14650

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Issue

Vol. 39, Iss. 8 — 15 March 1989

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