Antisymmetric exchange and its influence on the magnetic structure and conductivity of <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">La</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span>Cu<span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>4</mn></mrow></msub></mrow></math></span>

Tineke Thio; T. R. Thurston; N. W. Preyer; P. J. Picone; M. A. Kastner; H. P. Jenssen; D. R. Gabbe; C. Y. Chen; R. J. Birgeneau; Amnon Aharony

doi:10.1103/PhysRevB.38.905

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Antisymmetric exchange and its influence on the magnetic structure and conductivity of ${La}_{2}$ Cu $O_{4}$

Tineke Thio, T. R. Thurston, N. W. Preyer, P. J. Picone, M. A. Kastner, H. P. Jenssen, D. R. Gabbe, C. Y. Chen, R. J. Birgeneau, and Amnon Aharony

Phys. Rev. B 38, 905(R) – Published 1 July 1988

Abstract

Measurements of the magnetic moment of antiferromagnetic ${La}_{2}$ Cu $O_{4}$ at high fields reveal a new phase boundary originating from a previously undetected canting of the ${Cu}^{2 +}$ spins out of the Cu $O_{2}$ planes. This canting, together with the exponential temperature dependence of the two-dimensional correlation length, accounts quantitatively for the susceptibility peak at the Néel temperature. Enhancement of the conductivity in the ferromagnetic phase demonstrates a strong connection between the magnetism and charge transport.

Received 12 February 1988

DOI:https://doi.org/10.1103/PhysRevB.38.905

Authors & Affiliations

Tineke Thio, T. R. Thurston, and N. W. Preyer

Department of Physics and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

P. J. Picone^*

Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

M. A. Kastner

Department of Physics and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

H. P. Jenssen and D. R. Gabbe

Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

C. Y. Chen and R. J. Birgeneau

Department of Physics and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

Amnon Aharony^†

Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

^*Permanent address: Defense Science Technology Organization, Adelaide, Australia.
^†Permanent address: Tel Aviv University, Tel Aviv 69978, Israel.

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Vol. 38, Iss. 1 — 1 July 1988

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