Temperature-dependent electronic excitations of the Si(111)2×1 surface

N. J. DiNardo; J. E. Demuth; W. A. Thompson; Ph. Avouris

doi:10.1103/PhysRevB.31.4077

Rapid Communication

Temperature-dependent electronic excitations of the Si(111)2×1 surface

N. J. DiNardo, J. E. Demuth, W. A. Thompson, and Ph. Avouris

Phys. Rev. B 31, 4077(R) – Published 15 March 1985

Abstract

Electron-energy-loss measurements on cleaved Si(111) 2×1 surfaces show a temperature dependence in the position and shape of the absorption edge of the ∼0.5-eV surface-state transition. The observed trends in the onset line shape provide experimental evidence for surface-state excitonic polarons. In addition, a lower-lying, defect-related surface-state transition at ∼0.35 eV is studied at low temperature and found to have localized character.

Received 26 December 1984

DOI:https://doi.org/10.1103/PhysRevB.31.4077

Authors & Affiliations

N. J. DiNardo, J. E. Demuth, W. A. Thompson, and Ph. Avouris

IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10498

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Vol. 31, Iss. 6 — 15 March 1985

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Physical Review B

covering condensed matter and materials physics