Complete and incomplete wetting of krypton and oxygen on graphite: Reentrant type-2 growth on a scale of substrate strength

M. Bienfait, J. L. Seguin, J. Suzanne, E. Lerner, J. Krim, and J. G. Dash
Phys. Rev. B 29, 983 – Published 15 January 1984
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Abstract

Reflection high-energy electron-diffraction (RHEED) studies of krypton and oxygen films on basal-plane graphite show that the low-temperature mode of growth of Kr is type 1 (complete wetting) whereas that of O2 is type 2 (incomplete wetting). The present results extend earlier RHEED measurements on other gases, and indicate the existence of two distinct regimes of incomplete wetting growth separated by a narrow region of complete-wetting growth. These results, together with published work on other films, are analyzed on an improved scale of relative interaction parameters. Arguments are presented to suggest that the mechanisms for incomplete wetting are different in the weak and strong substrate regimes. The present study also shows certain distinct structural relationships between crystallites and layered film in the incomplete wetting growth regime.

  • Received 29 August 1983

DOI:https://doi.org/10.1103/PhysRevB.29.983

©1984 American Physical Society

Authors & Affiliations

M. Bienfait, J. L. Seguin, J. Suzanne, E. Lerner*, J. Krim, and J. G. Dash

  • Département de Physique, Faculté des Sciences de Luminy, Université d'Aix-Marseille II, Case 901, 13288 Marseille Cédex 9, France

  • *Permanent address: Instituto de Fisica Universidade de Rio de Janeiro, Caixa Postal 68528, Rio de Janeiro 21944, Guanabara, Brazil.
  • Permanent address: Department of Physics, University of Washington, Seattle, WA 98195.

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Vol. 29, Iss. 2 — 15 January 1984

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