A 16-Å Ag film (about 7 atomic layers) grown epitaxially on Si(111)-(7×7) at about 100°C was studied by angle-resolved photoemission over a wide photon-energy range. Spectra taken of the well-ordered, smooth film showed sharp $d$-band peaks characteristic of single-crystal Ag(111), and a sharp peak derived from a surface state of Ag(111) in the band gap at point $L$. The bulk valence-band dispersions of Ag were reevaluated.

• Received 18 October 1983

DOI:https://doi.org/10.1103/PhysRevB.29.2286