Ion implantation of graphite is characterized with respect to lattice damage and the distribution of implanted ions. Both the depth profile of the damage and of the implanted ions are shown to follow the models previously developed for ion-implanted semiconductors. Raman spectroscopy is used in a variety of ways to monitor different aspects of the lattice damage while Auger spectroscopy is used to monitor the implantation profile. Both first- and second-order Raman spectra are reported as a function of ionic mass and ion energy. The surface damage is examined by scanning electron microscopy while the microcrystalline regions in an amorphous background are observed by scanning transmission electron microscopy.

• Received 9 November 1981

DOI:https://doi.org/10.1103/PhysRevB.25.4142