The electronic structure of the rotation twin stacking fault in $\beta -\mathrm{Z}\mathrm{n}\mathrm{S}$ is calculated with the self-consistent pseudopotential method. The stacking fault creates a potential barrier of ∼0.07 eV and induces the localization of stacking-fault resonances near the top of the valence band. Stacking-fault states are also predicted to exist in the various gaps in the projected valence-band structure.

• Received 3 November 1980

DOI:https://doi.org/10.1103/PhysRevB.23.2563