Realizing gapped surface states in the magnetic topological insulator MnBi2xSbxTe4

Wonhee Ko, Marek Kolmer, Jiaqiang Yan, Anh D. Pham, Mingming Fu, Felix Lüpke, Satoshi Okamoto, Zheng Gai, P. Ganesh, and An-Ping Li
Phys. Rev. B 102, 115402 – Published 3 September 2020
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Abstract

The interplay between magnetism and nontrivial topology in magnetic topological insulators (MTIs) is expected to give rise to exotic topological quantum phenomena like the quantum anomalous Hall effect and the topological axion states. A key to assessing these novel properties is to realize gapped topological surface sates. MnBi2Te4 possesses nontrivial band topology with an intrinsic antiferromagnetic state. However, the highly electron-doped nature of the MnBi2Te4 crystals obstructs the exhibition of the surface band gap. Here, we tailor the material through Sb substitution to reveal the gapped surface states in MnBi2xSbxTe4. By shifting the Fermi level into the bulk band gap, we access the surface states and show a band gap of 50 meV at the Dirac point from quasiparticle interference measured by scanning tunneling microscopy (STM). Surface-dominant conduction is confirmed through transport spectroscopy measured by multiprobe STM below the Néel temperature. The surface band gap is robust against the out-of-plane magnetic field despite the promotion of field-induced ferromagnetism. The realization of bulk-insulating MTIs with the large exchange gap offers a promising platform for exploring emergent topological phenomena.

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  • Received 11 March 2020
  • Revised 12 August 2020
  • Accepted 14 August 2020

DOI:https://doi.org/10.1103/PhysRevB.102.115402

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Wonhee Ko1, Marek Kolmer1,*, Jiaqiang Yan2, Anh D. Pham1, Mingming Fu1,3, Felix Lüpke1,4, Satoshi Okamoto2, Zheng Gai1, P. Ganesh1, and An-Ping Li1,†

  • 1Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  • 2Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  • 3Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, Fujian Province 361005, People's Republic of China
  • 4Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37916, USA

  • *Current address: Ames Laboratory - U.S. Department of Energy, Ames, Iowa 50011, USA.
  • Corresponding author: apli@ornl.gov

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Issue

Vol. 102, Iss. 11 — 15 September 2020

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