Abstract
Observations of tunneling in Schottky barriers made from - and -type GaAs with Au as the metallic element are presented in detail. The characteristics are expressed in terms of the dependence of incremental resistance on applied voltage . These are interpreted in terms of a theory which uses the WKBJ approximations and a two-band formulation for the dispersion of states of the forbidden gap. An experimental determination of this dispersion is made which proves to be consistent with the theory. In this determination, a technique is introduced in which the characteristics are measured directly as . Fine structure is observed superposed on the background characteristic at and is interpreted as a manybody polar (polaron) interaction. Some new aspects of the problem of zero-bias anomalies are presented.
- Received 7 November 1966
DOI:https://doi.org/10.1103/PhysRev.161.681
©1967 American Physical Society