• Open Access

Understanding the Effect of Unintentional Doping on Transport Optimization and Analysis in Efficient Organic Bulk-Heterojunction Solar Cells

Florent Deledalle, Thomas Kirchartz, Michelle S. Vezie, Mariano Campoy-Quiles, Pabitra Shakya Tuladhar, Jenny Nelson, and James R. Durrant
Phys. Rev. X 5, 011032 – Published 24 March 2015
PDFHTMLExport Citation

Abstract

In this paper, we provide experimental evidence of the effects of unintentional p-type doping on the performance and the apparent recombination dynamics of bulk-heterojunction solar cells. By supporting these experimental observations with drift-diffusion simulations on two batches of the same efficient polymer-fullerene solar cells with substantially different doping levels and at different thicknesses, we investigate the way the presence of doping affects the interpretation of optoelectronic measurements of recombination and charge transport in organic solar cells. We also present experimental evidence on how unintentional doping can lead to excessively high apparent reaction orders. Our work suggests first that the knowledge of the level of dopants is essential in the studies of recombination dynamics and carrier transport and that unintentional doping levels need to be reduced below approximately 7×1015cm3 for full optimization around the second interference maximum of highly efficient polymer-fullerene solar cells.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 8 October 2014

DOI:https://doi.org/10.1103/PhysRevX.5.011032

This article is available under the terms of the Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.

Published by the American Physical Society

Authors & Affiliations

Florent Deledalle1, Thomas Kirchartz2,3,*, Michelle S. Vezie4, Mariano Campoy-Quiles5, Pabitra Shakya Tuladhar1, Jenny Nelson4, and James R. Durrant1,†

  • 1Department of Chemistry and Centre for Plastic Electronics, Imperial College London, South Kensington Campus, SW7 2AZ London, United Kingdom
  • 2IEK5-Photovoltaics, Forschungszentrum Jülich, 52425 Jülich, Germany
  • 3Faculty of Engineering and CENIDE, University of Duisburg-Essen, Carl-Benz-Strasse 199, 47057 Duisburg, Germany
  • 4Department of Physics and Centre for Plastic Electronics, Imperial College London, South Kensington Campus, SW7 2AZ London, United Kingdom
  • 5Institut de Cincia de Materials de Barcelona (ICMAB-CSIC), Esfera de la UAB, 08193 Bellaterra, Spain

  • *Corresponding author. t.kirchartz@fz-juelich.de
  • Corresponding author. j.durrant@imperial.ac.uk

Popular Summary

Most efforts at device optimization and analysis of transport in polymer-fullerene solar cells assume implicitly that the active layer is an intrinsic semiconductor. We instead focus on the effect that different amounts of inadvertent p-type doping has on two thickness series of different batches of high-performance DPP-TT-T:PC71BM devices. Understanding how device performance, and, in particular, charge carrier transport and recombination dynamics, responds to changes in the electric-field distribution resulting from inadvertent photoactive layer doping is a key consideration. We investigate device performance both with regard to the synthetic and purification strategies employed to control such doping levels and with regard to the choice of device architecture for optimum solar-cell performance.

Chemical doping in the active layer of solar cells affects device functionality. By combining charge extraction, transient photovoltage, study of the linearity of the short-circuit current with light intensity, and drift-diffusion modeling, we use experiments and simulations to demonstrate how commonly used methods to study recombination dynamics can be misleading if doping is not taken into account. We highlight, in particular, experimental evidence of doping as one potential cause of high reaction orders. We focus on two levels of doping: 1.5×1016 and 7×1016cm3. Our work emphasizes how, even without the use of any particular molecular dopant, the unintentional doping levels in some efficient donor materials can be sufficient to totally impede carrier transport in thick active layers, although the thin devices exhibit good transport and absorption properties. The doping thereby prevents the use of devices thicker than 100 nm. As a result, we suggest ways to control unintentional doping of the photoactive layer.

We expect that our work will highlight the importance of doping, which can characteristically vary by over an order of magnitude in the polymer making up solar cells. Since power conversion efficiency is a measure of a solar cell’s effectiveness, it is critical to ensure that device performance does not suffer unnecessarily because of ignorance of doping levels.

Key Image

Article Text

Click to Expand

Supplemental Material

Click to Expand

References

Click to Expand
Issue

Vol. 5, Iss. 1 — January - March 2015

Subject Areas
Reuse & Permissions
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review X

Reuse & Permissions

It is not necessary to obtain permission to reuse this article or its components as it is available under the terms of the Creative Commons Attribution 3.0 License. This license permits unrestricted use, distribution, and reproduction in any medium, provided attribution to the author(s) and the published article's title, journal citation, and DOI are maintained. Please note that some figures may have been included with permission from other third parties. It is your responsibility to obtain the proper permission from the rights holder directly for these figures.

×

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×