We describe concepts for high power semiconductor rf switches, designed to handle signals at $X$-band with power level near 100 MW. We describe an abstract design methodology and derive a general scaling law for these switches. We also present a design and experimental work of a switch operating at the ${\mathrm{TE}}_{01}$ mode in overmoded circular waveguides. The switch is composed of an array of tee junction elements that have a p-i-n diode array window in the third arm.

• Received 17 January 2002

DOI:https://doi.org/10.1103/PhysRevSTAB.5.062001

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