• Open Access

MgB2 nonlinear properties investigated under localized high rf magnetic field excitation

Tamin Tai, B. G. Ghamsari, T. Tan, C. G. Zhuang, X. X. Xi, and Steven M. Anlage
Phys. Rev. ST Accel. Beams 15, 122002 – Published 10 December 2012

Abstract

The high transition temperature and low surface resistance of MgB2 attracts interest in its potential application in superconducting radio frequency accelerating cavities. However, compared to traditional Nb cavities, the viability of MgB2 at high rf fields is still open to question. Our approach is to study the nonlinear electrodynamics of the material under localized rf magnetic fields. Because of the presence of the small superconducting gap in the π band, the nonlinear response of MgB2 at low temperature is potentially complicated compared to a single-gap s-wave superconductor such as Nb. Understanding the mechanisms of nonlinearity coming from the two-band structure of MgB2, as well as extrinsic sources of nonlinearity, is an urgent requirement. A localized and strong rf magnetic field, created by a magnetic write head, is integrated into our nonlinear-Meissner-effect scanning microwave microscope [T. Tai et al., IEEE Trans. Appl. Supercond. 21, 2615 (2011)]. MgB2 films with thickness 50 nm, fabricated by a hybrid physical-chemical vapor deposition technique on dielectric substrates, are measured at a fixed location and show a strongly temperature-dependent third harmonic response. We propose that several possible mechanisms are responsible for this nonlinear response.

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  • Received 29 December 2011

DOI:https://doi.org/10.1103/PhysRevSTAB.15.122002

This article is available under the terms of the Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.

Published by the American Physical Society

Authors & Affiliations

Tamin Tai1,2, B. G. Ghamsari2, T. Tan3, C. G. Zhuang3, X. X. Xi3, and Steven M. Anlage1,2

  • 1Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20742-3285, USA
  • 2Department of Physics, Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742-4111, USA
  • 3Physics Department, Temple University, Philadelphia, Pennsylvania 19122, USA

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Vol. 15, Iss. 12 — December 2012

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