Abstract
interface is among the most studied heterostructure materials due to the use of in the mainstream Si microelectronic technology. Following the discovery of new functionalities in such as ferroelectric and reversible resistance-switching properties, we study ultrathin films grown on highly doped ( and ) Si by means of synchrotron-based soft-x-ray spectroscopy techniques, such as x-ray photoelectron spectrosopy (XPS) and angle resolved photoelectron spectroscopy (ARPES). With angular resolution, we directly obtain the electronic dispersions (k) of the single-crystalline Si substrate in contact with the overlayer, depending on the Si doping and heat treatment, and determine the k-resolved band offset at the interface. Analysis of the Hf and Si core-level energies and line shapes as a function of photon energy yields band bending in and Si. The evolution of the Hf linewidth upon annealing points to development of a potential distribution across due to charged defects at the surface and interface with Si. The effect of intense x-ray beam on the interfaces, distorting their pristine electronic structure, is evaluated from the time evolution of line shape and position under irradiation. We propose a model explaining the effects of both heat treatment and x-ray irradiation on the electronic structure in terms of oxygen vacancies generated at the surface of and its interface to Si, where the released O atoms react with Si to form at the interface. The knowledge of the irradiation-dependent band bending is essential for precise determination of the k-dependent band offset locally at the interface.
- Received 15 April 2022
- Revised 28 July 2022
- Accepted 8 August 2022
DOI:https://doi.org/10.1103/PhysRevMaterials.6.084605
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