Metalorganic vapor phase epitaxy growth, transmission electron microscopy, and magneto-optical spectroscopy of individual InAsxP1x/Ga0.5In0.5P quantum dots

O. Del Pozo-Zamudio, J. Puebla, A. Krysa, R. Toro, A. M. Sanchez, R. Beanland, A. I. Tartakovskii, M. S. Skolnick, and E. A. Chekhovich
Phys. Rev. Materials 1, 034605 – Published 21 August 2017

Abstract

We report on growth and characterization of individual InAsxP1x/GaInP quantum dots with variable nominal As molar fraction. Magnetophotoluminescence experiments reveal quantum dot emission in a wide range from 1.3 to 1.8 eV, confirming successful incorporation of As into the quantum dots. Transmission electron microscopy reveals a core-cap structure of InAsP quantum dots with an InAs-rich core capped by an InP-rich layer. Inside the core, an average As molar fraction up to x0.15 is observed. The heavy-hole g factors are found to be strongly dependent on As molar fraction, while the electron g factors are close to the InP values. This suggests type-II carrier confinement in the studied InAsP dots with holes (electrons) localized in the core (cap) region. Finally, dynamic nuclear polarization is observed, which allows for further insight into structural properties using nuclear magnetic resonance.

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  • Received 4 May 2017

DOI:https://doi.org/10.1103/PhysRevMaterials.1.034605

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

O. Del Pozo-Zamudio1,*, J. Puebla1,2,†, A. Krysa3, R. Toro1, A. M. Sanchez4, R. Beanland4, A. I. Tartakovskii1, M. S. Skolnick1, and E. A. Chekhovich1,‡

  • 1Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
  • 2Center for Emergent Matter Science, RIKEN, Wako, Saitama 351-0198, Japan
  • 3Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom
  • 4Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom

  • *Present address: Instituto de Investigación en Comunicación Optica, Universidad Autónoma de San Luis Potosí, 78210 San Luis Potosí, S.L.P., Mexico; odelpozo@cactus.iico.uaslp.mx
  • jorgeluis.pueblanunez@riken.jp
  • e.chekhovich@sheffield.ac.uk

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Vol. 1, Iss. 3 — August 2017

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