Abstract
We report on growth and characterization of individual /GaInP quantum dots with variable nominal As molar fraction. Magnetophotoluminescence experiments reveal quantum dot emission in a wide range from 1.3 to 1.8 eV, confirming successful incorporation of As into the quantum dots. Transmission electron microscopy reveals a core-cap structure of InAsP quantum dots with an InAs-rich core capped by an InP-rich layer. Inside the core, an average As molar fraction up to is observed. The heavy-hole factors are found to be strongly dependent on As molar fraction, while the electron factors are close to the InP values. This suggests type-II carrier confinement in the studied InAsP dots with holes (electrons) localized in the core (cap) region. Finally, dynamic nuclear polarization is observed, which allows for further insight into structural properties using nuclear magnetic resonance.
1 More- Received 4 May 2017
DOI:https://doi.org/10.1103/PhysRevMaterials.1.034605
©2017 American Physical Society