Large Excitonic Enhancement of Optical Refrigeration in Semiconductors

G. Rupper, N. H. Kwong, and R. Binder
Phys. Rev. Lett. 97, 117401 – Published 11 September 2006

Abstract

We present a theoretical analysis for laser cooling of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. Our cooling threshold analysis shows that, at low temperatures, the presence of the excitonic resonance in the luminescence is essential in competing against heating losses. The theory includes self-consistent energy renormalizations and line broadenings from both instantaneous mean-field and frequency-dependent carrier-carrier correlations, and it is applicable from the few-Kelvin regime to above room temperature.

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  • Received 1 May 2006

DOI:https://doi.org/10.1103/PhysRevLett.97.117401

©2006 American Physical Society

Authors & Affiliations

G. Rupper, N. H. Kwong, and R. Binder

  • College of Optical Sciences, University of Arizona, Tucson, Arizona 85721, USA

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Issue

Vol. 97, Iss. 11 — 15 September 2006

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