Magnetic-Field-Dependent Carrier Injection at La2/3Sr1/3MnO3/ and Organic Semiconductors Interfaces

D. Wu, Z. H. Xiong, X. G. Li, Z. V. Vardeny, and Jing Shi
Phys. Rev. Lett. 95, 016802 – Published 1 July 2005

Abstract

We have fabricated organic diodes utilizing several π-conjugated organic semiconductors (OSEC) as spacer layers between La2/3Sr1/3MnO3 (LSMO) and various metallic electrodes, and measured their magnetoresistance (MR) and magnetoelectroluminescence (MEL) responses. The devices exhibit large negative high-field MR responses that resemble the MR response of the LSMO electrode, but amplified by 3 orders in the resistance, and accompanied by a positive high-field MEL effect. These magnetic-field effects result from enhanced carrier injection at the LSMO-OSEC interface that is attributed to the anomalous field-dependent Fermi level shift in LSMO.

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  • Received 8 December 2004

DOI:https://doi.org/10.1103/PhysRevLett.95.016802

©2005 American Physical Society

Authors & Affiliations

D. Wu1, Z. H. Xiong1, X. G. Li2, Z. V. Vardeny1, and Jing Shi1

  • 1Department of Physics, University of Utah, Salt Lake City, Utah 84112, USA
  • 2Hefei National Laboratory for Physical Sciences at Microscale and Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, People’s Republic of China

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Vol. 95, Iss. 1 — 1 July 2005

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