Comment on “Memory Effects in an Interacting Magnetic Nanoparticle System”

R. K. Zheng, Hongwei Gu, and X. X. Zhang
Phys. Rev. Lett. 93, 139702 – Published 21 September 2004

Abstract

A Comment on the Letter by Young Sun et al., Phys. Rev. Lett. 91, 167206 (2003). The authors of the Letter offer a Reply.

  • Figure
  • Received 18 December 2003

DOI:https://doi.org/10.1103/PhysRevLett.93.139702

©2004 American Physical Society

Authors & Affiliations

R. K. Zheng, Hongwei Gu, and X. X. Zhang*

  • Department of Physics and Institute of Nano Science and Technology The Hong Kong University of Science and Technology Clear Water Bay Kowloon, Hong Kong

  • *Email address: phxxz@ust.hk

Comments & Replies

Comment on “Memory Effects in an Interacting Magnetic Nanoparticle System”

M. Sasaki, P. E. Jönsson, H. Takayama, and P. Nordblad
Phys. Rev. Lett. 93, 139701 (2004)

Sun et al. Reply:

Young Sun, M. B. Salamon, K. Garnier, and R. S. Averback
Phys. Rev. Lett. 93, 139703 (2004)

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Original Article

Memory Effects in an Interacting Magnetic Nanoparticle System

Young Sun, M. B. Salamon, K. Garnier, and R. S. Averback
Phys. Rev. Lett. 91, 167206 (2003)

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Issue

Vol. 93, Iss. 13 — 24 September 2004

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