Abstract
Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a tenfold increase of the spin-relaxation rate as a function of applied electric field from 20 to at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field independent below reflecting quantum well interface asymmetry. The results indicate the achievability of a voltage-gateable spin-memory time longer than 3 ns simultaneously with a high electron mobility.
- Received 12 May 2003
DOI:https://doi.org/10.1103/PhysRevLett.91.246601
©2003 American Physical Society