Abstract
We studied the Shubnikov–de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities , which includes the vicinity of the apparent metal-insulator transition in two dimensions (2D MIT). Using a novel technique of measuring the SdH oscillations in superimposed and independently controlled parallel and perpendicular magnetic fields, we determined the spin susceptibility , the effective mass , and the factor for mobile electrons. These quantities increase gradually with decreasing density; near the 2D MIT, we observed enhancement of by a factor of .
- Received 9 October 2001
DOI:https://doi.org/10.1103/PhysRevLett.88.196404
©2002 American Physical Society