Mobility-Dependent Charge Injection into an Organic Semiconductor

Yulong Shen; Matthias W. Klein; Daniel B. Jacobs; J. Campbell Scott; George G. Malliaras

doi:10.1103/PhysRevLett.86.3867

Mobility-Dependent Charge Injection into an Organic Semiconductor

Yulong Shen, Matthias W. Klein, Daniel B. Jacobs, J. Campbell Scott, and George G. Malliaras

Phys. Rev. Lett. 86, 3867 – Published 23 April 2001

Abstract

Measurements of charge injection from indium tin oxide (ITO) into the organic semiconductor, tetraphenyl diamine doped polycarbonate (PC:TPD), were carried out. The current injected at the contact was measured as a function of the hole mobility in the organic semiconductor, which was varied from $10^{- 6}$ to $10^{- 3} cm^{2} / V ̇ s$ by adjusting the concentration of the hole transport agent, TPD, in the PC host. These experiments reveal that the current injected at the contact is proportional to the hole mobility in the bulk. As a result, the ITO/PC:TPD contact is found to limit current flow in all samples, regardless of the hole mobility in PC:TPD.

Received 30 June 2000

DOI:https://doi.org/10.1103/PhysRevLett.86.3867

Authors & Affiliations

Yulong Shen, Matthias W. Klein^*, Daniel B. Jacobs, J. Campbell Scott^†, and George G. Malliaras^‡

Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1503

^*Visiting Researcher from Heidelberg University, Kirchhoff-Institut für Physik, Albert-Ueberle-Strasse 3-5, D-69120 Heidelberg, Germany.
^†IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120-6099.
^‡To whom correspondence should be addressed.Email address: george@ccmr.cornell.edu