Phys. Rev. Lett. 73, 3600 (1994) - Critical Behavior of the Conductivity of Si:P near the Metal-Insulator Transition

Critical Behavior of the Conductivity of Si:P near the Metal-Insulator Transition

T. G. Castner

Phys. Rev. Lett. 73, 3600 – Published 26 December 1994

Abstract

Received 4 May 1994

DOI:https://doi.org/10.1103/PhysRevLett.73.3600

©1994 American Physical Society

Authors & Affiliations

Department of Physics and Astronomy University of Rochester, Rochester, New York 14627

Comments & Replies

Stupp et al. reply

H. Stupp, M. Hornung, M. Lakner, O. Madel, and H. v. Löhneysen

Phys. Rev. Lett. 72, 2122 (1994)

Critical behavior of Si:P at the metal-insulator transition

T. F. Rosenbaum, G. A. Thomas, and M. A. Paalanen

Phys. Rev. Lett. 72, 2121 (1994)

Stupp et al. Reply

H. Stupp, M. Hornung, M. Lakner, O. Madel, and H. v. Löhneysen

Phys. Rev. Lett. 73, 3601 (1994)

Original Article

Possible solution of the conductivity exponent puzzle for the metal-insulator transition in heavily doped uncompensated semiconductors

H. Stupp, M. Hornung, M. Lakner, O. Madel, and H. v. Löhneysen

Phys. Rev. Lett. 71, 2634 (1993)

References (Subscription Required)

Click to Expand

Issue

Vol. 73, Iss. 26 — 26 December 1994

Reuse & Permissions

Access Options

Author publication services for translation and copyediting assistance advertisement

Sign up to receive regular email alerts from Physical Review Letters