Fractional Stoichiometry of the GaAs(001) <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mi>c</mi><mo>(</mo><mn>4</mn><mn></mn><mo>×</mo><mn>4</mn><mo>)</mo></math></span> Surface: An <i>In-Situ</i> X-Ray Scattering Study

M. Sauvage-Simkin; R. Pinchaux; J. Massies; P. Calverie; N. Jedrecy; J. Bonnet; I. K. Robinson

doi:10.1103/PhysRevLett.62.563

Fractional Stoichiometry of the GaAs(001) $c (4 \times 4)$ Surface: An In-Situ X-Ray Scattering Study

M. Sauvage-Simkin, R. Pinchaux, J. Massies, P. Calverie, N. Jedrecy, J. Bonnet, and I. K. Robinson

Phys. Rev. Lett. 62, 563 – Published 30 January 1989

Abstract

Synchrotron x-ray diffraction analysis of GaAs(001) epilayers grown in situ by molecular-beam epitaxy shows clear evidence of As-As dimers on top of the outermost As layer. These dimers are ordered in a variable way between two structures which both show a $c (4 \times 4)$ symmetry but have different As content. Both structures have twofold symmetry although the unit cell is square.

Received 16 May 1988

DOI:https://doi.org/10.1103/PhysRevLett.62.563

Authors & Affiliations

M. Sauvage-Simkin^*, R. Pinchaux^†, J. Massies^‡, P. Calverie^§, N. Jedrecy, J. Bonnet, and I. K. Robinson^∥

Laboratoire pour l'Utilisation du Rayonnement Electromagnétique (LURE), Bâtiment 209D, Université Paris-Sud, F-91405 Orsay, CEDEX, France

^*Also at Laboratoire de Minéralogie-Cristallographie, 4 place Jussieu, F-75252 Paris, CEDEX, France.
^†Also at Université P. et M. Curie, 4 place Jussieu, F-75252 Paris, CEDEX, France.
^‡Also at Laboratoire de Physique du Solide et Energie Solaire, F-06950 Valbonne, France.
^§Present address: K. K. L'Air Liquide Laboratories, 5-9-9 Tokodai, Toyosako-Machi, Tsukuba-gun, IBARAKI-Pref, 300-25, Japan.
^∥Permanent address, AT&T Bell Laboratories, Murray Hill, New Jersey 07974.