Structural Characterization of the Si(111)-CaF2 Interface by High-Resolution Transmission Electron Microscopy

R. M. Tromp, F. K. LeGoues, W. Krakow, and L. J. Schowalter
Phys. Rev. Lett. 61, 2274 – Published 7 November 1988
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Abstract

  • Received 30 June 1988

DOI:https://doi.org/10.1103/PhysRevLett.61.2274

©1988 American Physical Society

Authors & Affiliations

R. M. Tromp, F. K. LeGoues, and W. Krakow

  • IBM Research Division T.J. Watson Research Center P.O. Box 218 Yorktown Heights, New York 10598

L. J. Schowalter

  • Rensselaer Polytechnic Institute Center for Integrated Electronics Troy, New York 12181

Comments & Replies

Batstone and Phillips Reply

J. L. Batstone and Julia M. Phillips
Phys. Rev. Lett. 61, 2275 (1988)

Original Article

Evidence for the influence of interfacial atomic structure on electrical properties at the epitaxial CaF2/Si(111) interface

J. L. Batstone, Julia M. Phillips, and E. C. Hunke
Phys. Rev. Lett. 60, 1394 (1988)

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Vol. 61, Iss. 19 — 7 November 1988

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